The nature of electrostatic potential fluctuations in Cu2ZnSnS4 and their role on photovoltaic device performance

18th Microscopy of Semiconducting Materials Conference

物理学;材料科学

Mendis, B.G.^1 ; Shannon, M.D.^2 ; Goodman, M.C.J.^1 ; Major, J.D.^3 ; Taylor, A.A.^1 ; Halliday, D.P.^1 ; Durose, K.^3

Department of Physics, Durham University, South Road, Durham, DH1 3LE, United Kingdom^1

SuperSTEM, Daresbury Laboratories, Keckwick Lane, Daresbury, WA4 4AD, United Kingdom^2

Stephenson Institute for Renewable Energy, University of Liverpool, L69 7ZF, United Kingdom^3

关键词: Aberration-corrected STEM;    Cu2ZnSnS4;    Donor concentrations;    Electrostatic potential fluctuations;    Nano-scale clusters;    Photovoltaic devices;    Potential fluctuations;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/471/1/012014/pdf
DOI  :  10.1088/1742-6596/471/1/012014

学科分类：材料科学（综合）

来源: IOP

【 摘 要 】

Aberration corrected STEM EELS is used to investigate point defects in Cu2ZnSnS4(CZTS). Nano-scale clusters of ZnCuanti-site donors are observed with the donor concentration being sufficiently high to degenerately dope the semiconductor. Uncompensated donors and acceptors result in electrostatic potential fluctuations within the material. The effect of these potential fluctuations on the photovoltaic device properties is discussed.