Modeling of silicon-germanium heterojunction bipolar transistors

7th International Conferences on Physics and Technology of Nanoheterostructure Microwave Electronics: Mokerov Readings 2016;8th International Conferences on Physics and Technology of Nanoheterostructure Microwave Electronics: Mokerov Readings 2017

Bakerenkov, A.S.^1 ; Felitsyn, V.A.^1 ; Rodin, A.S.^1 ; Bursian, Yu D.^1

National Research Nuclear University MEPhI (MEPhI), Kashirskoe shosse 31, Moscow

115409, Russia^1

关键词: Measurements of;    Silicon Germanium;    Silicon germanium heterojunction bipolar transistors;    Test structure;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/475/1/012002/pdf
DOI  :  10.1088/1757-899X/475/1/012002

来源: IOP

【 摘 要 】

The results of measurements of current-voltage characteristics of SiGe transistors for different temperatures are presented. The extraction results of parameters of test structures of the silicon-germanium SiGe bipolar transistors are presented.