- 已选条件:
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× Field effect transistor (FETs)
作者:Hill, Frances A.^1, Velásquez-García, Luis F.^1
关键词:Experimental characterization;Experimental values;...
会议举办机构:Microsystems Technology Laboratories, Massachusetts Institute of Technology, 77 Massachusetts Ave., Cambridge
会议时间:2015
作者:Yermolaev, D.M.^1;Marem'Yanin, K.M.^2;Maleev, N.A.^4;等
关键词:Field effect transistor (FETs);Gate contact;...
会议举办机构:Institute of Microelectronic Technology and High-Purity Materials, Russia^1
会议时间:
作者:Zhang, Wanting^1, Kang, Peng^2, Chen, Huahui^1
关键词:Computational studies;Field effect transistor (FETs);...
会议举办机构:Department of Materials Science and Engineering, China University of Mining and Technology, Beijing
会议时间:2018
4 Research on photoresponse characteristics of bilayer molybdenum disulfide field effect transistors [会议论文]
作者:Shan, J.J.^1;Li, J.H.^1;Chu, X.Y.^1;等
关键词:Channel materials;Contrast experiment;...
会议举办机构:School of Science, International Joint Research Center for Nanophotonics and Biophotonics, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun
会议时间:2018