Anisotropic Negative Differential Resistance in Monolayer Black Phosphorus

2017 3rd International Conference on Environmental Science and Material Application

生态环境科学;材料科学

Zhang, Wanting^1 ; Kang, Peng^2 ; Chen, Huahui^1

Department of Materials Science and Engineering, China University of Mining and Technology, Beijing

100083, China^1

School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing

100083, China^2

关键词: Computational studies;    Field effect transistor (FETs);    IV characteristics;    Layered material;    Nanoelectronic devices;    Negative differential resistances;    Non-equilibrium Green's function;    Transmission spectrums;   

Others  :  https://iopscience.iop.org/article/10.1088/1755-1315/108/2/022046/pdf
DOI  :  10.1088/1755-1315/108/2/022046

来源: IOP

【 摘 要 】

The tremendous potential application in emerging two-dimensional layered materials such as black phosphorus (BP) has attracted great attention as nanoscale devices. In this paper, the effect of anisotropic negative differential resistance (NDR) in monolayer black phosphorus field-effect transistors (FETs) is reported by the first-principles computational study based on the non-equilibrium Green's function approach combined with density functional theory. The transport properties including current-voltage (I-V) relation and transmission spectrum of monolayer BP are investigated at different gate voltages (Vg). Further studies indicate that NDR occurs at a specific gate voltage in the armchair direction rather than in the zigzag direction. The decrease of current in I-V characteristics can be understood from the generation of non-conducting states region moving towards the Fermi level resulting in a reduction of the integration within corresponding energy range in the transmission spectrum. Our results offer useful guidance for designing FETs and other potential applications in nanoelectronic devices based on BP.