Non-volatile Memory Effect of Redox Proteins

non-volatile memory;organic field-effect transistor memory;charge trapping;redox proteins;heme structure;620

융합과학기술대학원 나노융합학과 ;

University:서울대학교 대학원

关键词: non-volatile memory;    organic field-effect transistor memory;    charge trapping;    redox proteins;    heme structure;    620;   

Others  :  http://s-space.snu.ac.kr/bitstream/10371/133298/1/000000004123.pdf

美国|英语

来源: Seoul National University Open Repository

【 摘 要 】

In this paper, we demonstrated non-volatile memory effect of redox proteins such as myoglobin, hemoglobin, and cytochrome c. Also, we introduced the fabrication of non-volatile organic field-effect transistor (OFET) memory utilizing myoglobin as a charge trapping element. Redox proteins are composed of a heme structure containing an iron atom, which have an effect on charge trapping and releasing via reversible redox reactions. Myoglobin charge trapping layer in OFET-based memory showed a considerable memory window, which depended proportionally on the concentrations of myoglobin solutions. We obtained the maximum memory window of ~20 V as well as good endurance properties in ambient conditions. Also, other redox proteins could be successfully applied to the memory device which showed a reliable memory window.