Investigation of Graphene Formation from Graphite Oxide and Silicon Carbide

SiC epitaxy;Raman;XPS;SEM;Ion reduction;QMS;Light sensor;Laser reduction;Graphite oxide;Graphene oxide

Sokolov, Denis A. ; Orlando,Thomas Chemistry and Biochemistry Fernández, Facundo M. First, Phillip Henderson, Clifford Tolbert, Laren M. ; Orlando,Thomas

University:Georgia Institute of Technology

Department:Chemistry and Biochemistry

关键词: SiC epitaxy;    Raman;    XPS;    SEM;    Ion reduction;    QMS;    Light sensor;    Laser reduction;    Graphite oxide;    Graphene oxide;   

Others  :  https://smartech.gatech.edu/bitstream/1853/53642/1/sokolov_denis_a_201305_phd.pdf

美国|英语

来源: SMARTech Repository

【 摘 要 】

Graphene is a novel two dimensional material that is revolutionizing many areas of science and it is no surprise that a significant amount of effort is dedicated to its investigation. One of the major areas of graphene research is the development of procedures for large scale production. Among many recently developed methodologies, graphene oxide reduction stands out as a straightforward and scalable procedure for producing final material with properties similar to those of graphene. Laser reduction of graphite oxide is one of the novel approaches for producing multilayer graphene, and this work describes a viable approach in detail. It is determined that a material which is comprised of a combination of laser reduced graphite oxide-coupled to an unreduced graphite oxide layers beneath it, produces a broadband photosensitive material. The efficiency of light conversion into electrical current is greatly dependent upon the oxygen content of the underlying graphite oxide. Developing novel ways for reducing graphite oxide is an ongoing effort. This work also presents a new method for achieving complete reduction of graphite oxide for producing predominantly sp2 hybridized material. This approach is based on the irradiation of graphite oxide with a high flux 3 keV Ar ion beam in vacuum. It is determined that the angle of irradiation greatly influences the final surface morphology of reduced graphite oxide. Also, multilayer epitaxial graphene growth on silicon carbide in ultra-high vacuum was investigated with quadrupole mass spectrometry (QMS). Subliming molecular and atomic species were monitored as a function of temperature and heating time. The grown films were characterized with X-ray photoelectron spectroscopy coupled with Ar ion depth profiling.