Structural Modifications in Epitaxial Graphene on SiC Following 10 keV Nitrogen Ion Implantation

Applied Sciences

Grzegorz Greczynski¹  Mikael Syväjärvi¹  GholamReza Yazdi¹  Rositsa Yakimova¹  PriyaDarshni Kaushik¹  GarimellaBhaskara Venkata Subba Lakshmi² 

[1] Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping, Sweden;Special Centre for Nanoscience, Jawaharlal Nehru University, New Delhi 110067, India;

关键词: ion implantation;    Raman;    AFM;    XPS;    graphene;   

DOI  :  10.3390/app10114013

来源: DOAJ

【 摘 要 】

Modification of epitaxial graphene on silicon carbide (EG/SiC) was explored by ion implantation using 10 keV nitrogen ions. Fragments of monolayer graphene along with nanostructures were observed following nitrogen ion implantation. At the initial fluence, sp³ defects appeared in EG; higher fluences resulted in vacancy defects as well as in an increased defect density. The increased fluence created a decrease in the intensity of the prominent peak of SiC as well as of the overall relative Raman intensity. The X-ray photoelectron spectroscopy (XPS) showed a reduction of the peak intensity of graphitic carbon and silicon carbide as a result of ion implantation. The dopant concentration and level of defects could be controlled both in EG and SiC by the fluence. This provided an opportunity to explore EG/SiC as a platform using ion implantation to control defects, and to be applied for fabricating sensitive sensors and nanoelectronics devices with high performance.

【 授权许可】

Unknown