Improved growth, ordering, and characterization of sidewall epitaxial graphene nanoribbons

Graphene;Epitaxial graphene;Nanoribbons;Silicon carbide;Surface characterization

Nevius, Meredith Swegan ; Conrad, Edward H Physics de Heer, Walter First, Phillip Jiang, Zhigang Bassiri-Gharb, Nazanin ; Conrad, Edward H

University:Georgia Institute of Technology

Department:Physics

关键词: Graphene;    Epitaxial graphene;    Nanoribbons;    Silicon carbide;    Surface characterization;   

Others  :  https://smartech.gatech.edu/bitstream/1853/55605/1/NEVIUS-DISSERTATION-2016.pdf

美国|英语

来源: SMARTech Repository

【 摘 要 】

One material that has drawn much attention as a viable supplementary material to silicon is graphene, an atom-thick sheet of carbon in a hexagonal lattice. Graphene has many desirable qualities, including massless Dirac fermion charge carriers and an intrinsically two-dimensional structure. However, graphene is a semi-metal; it lacks a bandgap. Therefore, the purpose of this work is to explore a structured graphene geometry that is shown to produce a new form of semiconducting graphene seamlessly connected to metallic graphene nanoribbons. Nanoribbons are patterned and grown on silicon carbide with a combined top-down/bottom-up fabrication method that is compatible with current lithographic technology. Surface characterization measurements, including angle-resolved photoemission spectroscopy (ARPES), low-energy electron microscopy (LEEM), and photoemission electron microscopy (PEEM), are used to characterize ribbon samples and verify semiconducting and metallic properties of the structured graphene.