High performance radio-frequency and millimeter-wave front-end integrated circuits design in silicon-based technologies

Wireless communications;Transceiver;Power amplifiers;Integrated circuits;Front-end;Silicon;SiGe;CMOS;W-band

Kim, Jihwan ; Electrical and Computer Engineering

University:Georgia Institute of Technology

Department:Electrical and Computer Engineering

关键词: Wireless communications;    Transceiver;    Power amplifiers;    Integrated circuits;    Front-end;    Silicon;    SiGe;    CMOS;    W-band;   

Others  :  https://smartech.gatech.edu/bitstream/1853/44704/1/kim_jihwan_201108_phd.pdf

美国|英语

来源: SMARTech Repository

【 摘 要 】

Design techniques and procedures to improve performances of radio-frequency and millimeter-wave front-end integrated circuits were developed. Power amplifiers for high data-rate wireless communication applications were designed using CMOS technology employing a novel device resizing and concurrent power-combining technique to implement a multi-mode operation. Comprehensive analysis on the efficiency degradation effect of multi-input-single-output combining transformers with idle input terminals was performed. The proposed discrete resizing and power-combining technique effectively enhanced the efficiency of a linear CMOS power amplifier at back-off power levels. In addition, a novel power-combining transformer that is suitable to generate multi-watt-level output power was proposed and implemented. Employing the proposed power-combining transformer, a high-power linear CMOS power amplifier was designed. Furthermore, receiver building blocks such as a low-noise amplifier, a down-conversion mixer, and a passive balun were implemented using SiGe technology for W-band applications.