Deposition of Metal and Metal Oxide Thin Films from Metal Organic Precursors in Supercritical Carbon Dioxide Solution

CFD;Gate Metal;ALD;Sc CO2;Thin Film Deposition;High k Dielectric

Barua, Dipak ; Ruben G. Carbonell, Committee Member,Gregory N. Parsons, Committee Chair,Carlton Osburn, Committee Member,Barua, Dipak ; Ruben G. Carbonell ; Committee Member ; Gregory N. Parsons ; Committee Chair ; Carlton Osburn ; Committee Member

University:North Carolina State University

关键词: CFD;    Gate Metal;    ALD;    Sc CO2;    Thin Film Deposition;    High k Dielectric;   

Others  :  https://repository.lib.ncsu.edu/bitstream/handle/1840.16/628/etd.pdf?sequence=1&isAllowed=y

美国|英语

来源: null

【 摘 要 】

Thin films of metals and metal-oxides are deposited in batch (Chemical Fluid Deposition) and cyclic (Atomic Layer Deposition) processes from metal organic precursors in supercritical carbon dioxide solutions. New materials have been introduced in the deposition processes. Deposited films are analyzed in details in order to evaluate their quality and chemical composition. Analyzing techniques, X-ray photoelectron spectroscopy (XPS), ellipsometry, Fourier transform infrared spectroscopy (FTIR), atomic force microscopy (AFM), and auger electron spectroscopy (AES) are adopted to characterize the films. Capacitance-voltage measurements are performed to prove the device quality deposition of metal oxide films. The process establishes a new approach in metal oxide deposition, and controllable growth of metal and metal oxide films in supercritical carbon dioxide.