Material characterization and process development for indium-arsenide / indium-gallium-antimonide channel, high electron mobility transistors for low power, high speed applications

High Electron Mobility Transistor (HEMT);Aluminium Antimonide (AlSb);Indium Arsenide (InAs)

Bambery, Rohan ; Feng ; Milton

关键词: High Electron Mobility Transistor (HEMT);    Aluminium Antimonide (AlSb);    Indium Arsenide (InAs);   

Others  :  https://www.ideals.illinois.edu/bitstream/handle/2142/18297/Bambery_Rohan.pdf?sequence=1&isAllowed=y

美国|英语

来源: The Illinois Digital Environment for Access to Learning and Scholarship

【 摘 要 】

Efforts to push the performance of transistors for millimeter-wave and microwaveapplications have borne fruit through device size scaling and the use of novel material systems. III-V semiconductors and their alloys hold a distinct advantage over silicon because they have much higher electron mobility which is a prerequisite for high frequency operation. InGaAs/InP pseudomorphic heterojunction bipolar transistors (HBTs) have demonstrated fT of 765 GHz at room temperature and InP based high electron mobility transistors (HEMTs) have demonstrated fMax of 1.2 THz. The 6.1 A lattice family of InAs, GaSb, AlSb covers a wide variety of band gaps and is an attractive future material system for high speed device development. Extremely high electron mobilities ~ 30,000 cm^2 V^-1s^-1 have been achieved in modulation doped InAs-AlSb structures. The work described in this thesis involves material characterization and process development for HEMT fabrication on this material system.