Growth and characterization of III-V compound semiconductor nanostructures by metalorganic chemical vapor deposition

nanowire;Vapor-liquid-solid (VLS);III-V;quantum dot;gaas;offcut;suspended;zinc;Indium Arsenide (InAs);nanostructure;movpe;mocvd

Dowdy, Ryan S. ; Li, Xiuling ; Li ; Xiuling

关键词: nanowire;    Vapor-liquid-solid (VLS);    III-V;    quantum dot;    gaas;    offcut;    suspended;    zinc;    Indium Arsenide (InAs);    nanostructure;    movpe;    mocvd;   

Others  :  https://www.ideals.illinois.edu/bitstream/handle/2142/14672/Dowdy_Ryan.pdf?sequence=2&isAllowed=y

美国|英语

来源: The Illinois Digital Environment for Access to Learning and Scholarship

【 摘 要 】

Planar <110> GaAs nanowires and quantum dots grown by atmospheric MOCVD have been introduced to non-standard growth conditions such as incorporating Zn and growing them on free-standing suspended films and on 10° off-cut substrates. Zn doped nanowires exhibited periodic notching along the axis of the wire that is dependent on Zn/Ga gas phase molar ratios. Planar nanowires grown on suspended thin films give insight into the mobility of the seed particle and change in growth direction. Nanowires that were grown on the off-cut sample exhibit anti-parallel growth direction changes. Quantum dots are grown on suspended thin films and show preferential growth at certain temperatures. Envisioned nanowire applications include twin-plane superlattices, axial pn-junctions, nanowire lasers, and the modulation of nanowire growth direction against an impeding barrier and varying substrate conditions.