Planar nanowire high electron mobility transistor and down-scaling of planar nanowire

Gallium Arsenide (GaAs);planar nanowire;High Electron Mobility Transistor (HEMT);III-V;Very-large-scale integration (VLSI);micro-tube;resonator

Miao, Xin ; Li ; Xiuling

关键词: Gallium Arsenide (GaAs);    planar nanowire;    High Electron Mobility Transistor (HEMT);    III-V;    Very-large-scale integration (VLSI);    micro-tube;    resonator;   

Others  :  https://www.ideals.illinois.edu/bitstream/handle/2142/45391/Xin_Miao.pdf?sequence=1&isAllowed=y

美国|英语

来源: The Illinois Digital Environment for Access to Learning and Scholarship

【 摘 要 】

Monolithically grown planar nanowire (NW) high electron mobility transistors (NW-HEMTs) have been demonstrated with self-aligned <110> planar GaAs NW channels capped by a thin film AlGaAs barrier. The planar NW-HEMTs exhibit uniform and scalable DC characteristics; and resolve the electrical non-uniformity issues in VLS grown NW-FETs with doped NW channels. Growth optimization through mapping the parameters of group III flow, V/III ratio and temperature has also been successfully done for the realization of high-quality down-scaled planar GaAs NWs with widths as small as 35 nm. With further development of our planar NW technology, wafer-scale low-power and high-speed VLSI circuits involving 3D planar NW channel from the bottom-up is promising.