Evaluation of room-temperature semiconductor detectors for ultrahigh resolution pet imaging

Depth-of-interaction (DOI);CdTe semiconductor detector;Positron emission tomography (PET);waveform analysis;system calibration

Shen, Zengming ; Sullivan, Clair J. ; Meng ; Ling Jian

关键词: Depth-of-interaction (DOI);    CdTe semiconductor detector;    Positron emission tomography (PET);    waveform analysis;    system calibration;   

Others  :  https://www.ideals.illinois.edu/bitstream/handle/2142/92806/SHEN-THESIS-2016.pdf?sequence=1&isAllowed=y

美国|英语

来源: The Illinois Digital Environment for Access to Learning and Scholarship

【 摘 要 】

The evaluation of a room-temperature semiconductor detector for ultrahigh resolution positron emission tomography (PET) imaging is presented. The approach is based on the use of a CdTe semiconductor detector. The detector is a 2mm thick cadmium telluride (CdTe) detector with a pixel pitch of 350μm x 350μm; it is bump bonded to an energy-resolved photo-counting (ERPC) readout applied-specific integrated circuit (ASIC). It can be demonstrated that this configuration yields depth-of-interaction (DOI) information. Two ways of extracting DOI information are presented. A prototype PET system based on this detector has been developed. The corresponding system calibration algorithm is presented for the PET system, which considers the DOI information. The validity of the two proposed methods of extracting DOI information has been studied by doing the following experiment. The measurements were made by using a Co-57 point source with an active spherical area of diameter 0.25mm. The beam entered the sensor at an angle of ~48.8 degrees to the surface; results showed that the beam passed through 5 pixels before exiting the bottom of the sensor. The validity of these two methods of extracting DOI information was further demonstrated by development of a related PET system calibration algorithm. Future work will address image reconstruction based on results from this PET system calibration algorithm.