Growth of epitaxial nanoscale columnar copper indium diselinide thin films by introduction of sodium flouride during growth

CuInSe2 (CIS);Copper indium gallium diselinide (CIGS);Thin Films;Epitaxy;Nanostructures;Nanowires

Kardel, Justin Tynes ; Rockett ; Angus A.

关键词: CuInSe2 (CIS);    Copper indium gallium diselinide (CIGS);    Thin Films;    Epitaxy;    Nanostructures;    Nanowires;   

Others  :  https://www.ideals.illinois.edu/bitstream/handle/2142/92674/KARDEL-THESIS-2016.pdf?sequence=1&isAllowed=y

美国|英语

来源: The Illinois Digital Environment for Access to Learning and Scholarship

【 摘 要 】

The effect of NaF on the growth of CuInSe2 (CIS) epitaxial thin films by a hybrid sputtering and evaporation method was studied.Low levels of NaF deposition during interruptions of epitaxial growth reduced surface roughness.Larger amounts of NaF resulted in columnar epitaxial films with <112> surface facets on the sides of the columns. X-ray diffraction shows all films to be largely epitaxial, with small amounts of (301)-surface-oriented CIS grains present in films with the highest NaF addition. In the columnar films, a buildup of Na was seen near the substrate/film interface, suggesting that Na is buried during columnar growth.I conclude that the Na plays an integral role in the creation of columns in the films based on the dose of Na added during growth. A mechanism for the transition to growth of columns with critical concentrations of NaF is proposed.