Growth of Silicon Nanowire Mechanical Oscillators for Force-Detected Magnetic Resonance Measurements

Si Nanowires;CVD

Liu, Xudongaffiliation1:Faculty of Science ; advisor:Budakian, Raffi ; Budakian, Raffi ;

University of Waterloo

关键词: CVD;    Master Thesis;    Si Nanowires;   

Others  :  https://uwspace.uwaterloo.ca/bitstream/10012/12902/3/Liu-Xudong.pdf

瑞士|英语

来源: UWSPACE Waterloo Institutional Repository

【 摘 要 】

This thesis describes two ways to grow silicon nanowires with the catalyst gold (Au) by Chemical Vapor Deposition (CVD) system. One way to prepare catalyst is drop-casting gold nanoparticles solution, the other is making a gold pattern by electron beam lithography (EBL). The diameters of silicon nanowires can be controlled by size of gold nanoparticles in the solution or the size of gold nano-disks which is achieved by EBL. The position-controlled epitaxial growth of Si nanowires is realized by gold nano-disks pattern through EBL. Our Si nanowires are grown on the n-type Si (111) wafer at the same condition. The length is 12-17 μm for Si nanowires 50-150nm in diameter. The taper of Si nanowires is 1 nm/μm in both ways. We found that the growth rates are depend on the size of Si nanowires in drop-casting method, but independent in EBL method. Our purpose of growing Si nanowires is to use it as a cantilever in magnetic resonance force microscopy (MRFM) due to its high aspect ratio and low mechanical dissipation. Therefore, the Si nanowires is required to be vertical and smooth. A high vertical yield, 80%, is achieved by our growth recipe. With HCl added, the surface of Si nanowire is polished. Moreover, the lowest intrinsic dissipation of our nanowire is 6×〖10〗^(-15)kg/s at room temperature, and our Si nanowires can be used as a force sensor for MRFM.