Reveal the Plastic Deformation Mechanisms of Si Nanowires at the Atomic Scale

Research & Reviews: Journal of Pure and Applied Physics

article

Deli Kong¹  Tianjiao Xin¹  Lirong Xiao¹  Xuechao Sha¹  Lu Yan¹  Lihua Wang¹ 

[1] Institute of Microstructure and Property of Advanced Materials, Beijing University of Technology

关键词: Si Nanowires;    Atomic-scale;    in situ;    Plastic deformation;    High-resolution transmission electron microscopy;   

来源: Research & Reviews

【 摘 要 】

To safely and reliably use NWs for different kinds of nano devices, the structural evolution of these nanowires under external stress become very important. Here, by using the home-made in situ atomic-scale experimental device, Si nanowire bending experiments were conducted with highresolution transmission electron microscopy. The direct dynamic atomicscale observations revealed that dislocation nucleation, motion, escape and interaction were responsible for the large plastic deformation ability of Si nanowires. The prevalent full dislocation movement and interactions induced the formation of Lomer lock dislocations in the Si nanowires. We directly demonstrated that the continuous straining on the Lomer dislocations induced local atoms disordering in the Si nanowires. These results help to explain the ultra-large plastic deformation ability of Si on the nanometer scale.

【 授权许可】

Unknown