Effect of Gas Flow Rate on the High-Rate, Localized Jet-Deposition of Silicon in SiH4/H2 PE-CVD

JOURNAL OF CHEMICAL ENGINEERING OF JAPAN

Satoshi Nishida¹  Hiroshi Muta¹  Shizuma Kuribayashi¹ 

[1] Environmental and Energy System Division, Graduate School of Engineering, Gifu University

关键词: CVD;    Supersonic Jet;    CFD;    Silicon Deposition;    High Deposition Rate;   

DOI  :  10.1252/jcej.13we263

来源: Maruzen Company Ltd

【 摘 要 】

References(18)In this study, a high speed jet was used to deposit silicon by SiH4/H2 plasma-enhanced chemical vapor deposition (PE-CVD), demonstrating a higher deposition rate than conventional PE-CVD. The shape of the deposited silicon material was found to depend on the mass-flow rate of the SiH4/H2 mixture. The velocity profiles of the jet flow were subsequently analyzed by computational fluid dynamics (CFD), with the results indicating that the velocity of the jet significantly influences the mass of silicon deposited on a glass substrate due to variation in mass transfer near substrate surface.

【 授权许可】

Unknown