Critical Phenomena of the Disorder Driven Localization-Delocalization Transition.

Ruehlaender, M.

Technical Information Center Oak Ridge Tennessee

关键词: Superconductors;    Thesis;    Symmetry;    Conductance;    Boundary conditions;   

RP-ID  :  DE2003804162

学科分类：工程和技术（综合）

美国|英语

来源: National Technical Reports Library

【 摘 要 】

Metal-to-insulator transitions are generally linked to two phenomena: electron-electron correlations and disorder. Although real systems are usually responding to a mixture of both, they can be classified as undergoing a Mott-transition, if the former process dominates, or an Anderson-transition, if the latter dominates. High-T(sub c) superconductors, e.g., are a candidate for the first class. Materials in which disorder drives the metal-to-insulator transition include doped semiconductors and amorphous materials. After briefly reviewing the previous research on transport in disordered materials and the disorder-induced metal-to-insulator transition, a summary of the model and the methods used in subsequent chapters is given.