Diffusion Resistant, High-Purity Wafer Carriers For SI Semiconductor Production.

Tiegs, T. N. ; Leaskey, L.

Technical Information Center Oak Ridge Tennessee

关键词: Semiconductors;    Wafers;    Diffusion;    Infiltration;    Composites;   

RP-ID  :  DE2001769361

学科分类：工程和技术（综合）

美国|英语

来源: National Technical Reports Library

【 摘 要 】

The Cooperative Research and Development Agreement (CRADA) was directed towards development of diffusion resistant, high-purity wafer carriers for Si semiconductor production with improved properties compared to current materials. The determination of the infiltration behavior is important for controlling the fabrication process to obtain consistent high-quality products. Ammonium molybdate or molybdenum carbide were found to be suitable as a precursor to produce SiC-MoSi(sub 2)-Si composites by Si infiltration into carbon preforms. Experiments on the pyrolysis of the preforms showed variable infiltration behavior by the molten Si (within the range of conditions in the present study). Further research is required to reproducibly and consistently fabricate flaw-free articles. The strength of the composites fabricated to-date was 325(+-)124 MPa, which is higher than current commercial products. Better process control should result in higher average strengths and reduce the variability.