科技报告详细信息
Intrinsic DX Centers in Ternary Chalcopyrite Semiconductors (Presentation). | |
Lany, S. ; Zunger, A. | |
Technical Information Center Oak Ridge Tennessee | |
关键词: Solar energy; Chalcopyrite; Defects; Physics; | |
RP-ID : DE2008939530 | |
学科分类:工程和技术(综合) | |
美国|英语 | |
来源: National Technical Reports Library | |
【 摘 要 】
The conclusions of this report are: (1) intrinsic donor-type defects In(sub Cu), Ga(sub Cu), and V(sub Se), and their complexes with V(sub Cu) cause metastability, but also act to limit V(sub OC); (2) growth conditions which minimize these defects (Cu-rich/Se-rich) are very different from those currently used; and (3) overcoming V(sub OC) limitation requires to address other issues and trade-offs.
【 预 览 】
Files | Size | Format | View |
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DE2008939530.pdf | 883KB | download |