科技报告详细信息
Intrinsic DX Centers in Ternary Chalcopyrite Semiconductors (Presentation).
Lany, S. ; Zunger, A.
Technical Information Center Oak Ridge Tennessee
关键词: Solar energy;    Chalcopyrite;    Defects;    Physics;   
RP-ID  :  DE2008939530
学科分类:工程和技术(综合)
美国|英语
来源: National Technical Reports Library
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【 摘 要 】

The conclusions of this report are: (1) intrinsic donor-type defects In(sub Cu), Ga(sub Cu), and V(sub Se), and their complexes with V(sub Cu) cause metastability, but also act to limit V(sub OC); (2) growth conditions which minimize these defects (Cu-rich/Se-rich) are very different from those currently used; and (3) overcoming V(sub OC) limitation requires to address other issues and trade-offs.

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