Investigation into obstacles to the implementation of the directed-self assembly of block copolymers

Directed self-assembly;Block copolymers;Synthesis;Defects;SAXS;blends

Breaux, Caleb Lamar ; Henderson, Clifford L. Ludovice, Peter J. Chemical and Biomolecular Engineering Meredith, Carson J. Lin, Zhiqun Bucknall, David ; Henderson, Clifford L.

University:Georgia Institute of Technology

Department:Chemical and Biomolecular Engineering

关键词: Directed self-assembly;    Block copolymers;    Synthesis;    Defects;    SAXS;    blends;   

Others  :  https://smartech.gatech.edu/bitstream/1853/59912/1/BREAUX-DISSERTATION-2018.pdf

美国|英语

来源: SMARTech Repository

【 摘 要 】

To meet the growing demands of the microelectronics industry and their desire to continue Moore’s Law, a variety of routes to extend or replace optical lithography have beensuggested. Among these options is the directed self-assembly (DSA) of block copolymers(BCPs) which have the ability to microphase separate into features with spacings aslow as sub-10 nm. The DSA of these features are typically achieved by graphoepitaxyor chemoepitaxy which use either topography in the substrate or chemically preferentialpre-patterns in the substrate, respectively, to direct the BCP’s phase separation. Despite theuse of these techniques, BCPs suffer from several roadblocks to their implementation inchip manufacturing including production of adequate BCP materials, high line edge roughness (LER) and line width roughness (LWR), and high defect densities. This work explores possible reasons for high LER, LWR, and defects using coarse-grained molecular dynamics and expands the library of BCP materials by synthesizing two new BCPs. Chapter 3 uses simulations to investigate the effect pinning stripe position, density multiplication, and defect order on the relative free energy of dislocation defects for BCP filmson chemoepitaxial underlayers. In Chapter 4 the effect of homopolymer concentration on LER and LWR is explored for BCP/homopolymer blends. Chapter 5 and 6 show the synthesis and characterization of Poly(4-tertbutyl styrene)-block-Poly(propyl methacrylate)(PtBS-b-PPMA) and PtBS-b-Poly(2-hydroxyethyl methacrylate) (PtBS-b-PHEMA), respectively. PtBS-b-PPMA is a new low X BCP that may be useful in applications such as photonic crystals and filtration membranes as well as in discerning the relationship between defect annihilation rates and X. PtBS-b-PHEMA is a new high X BCP that has shown via SAXS profiles to be able to phase separate into features with a sub-7 nm pitch.xxi