Wafer Bonding and Epitaxial Transfer of GaSb-Based Epitaxy to GaAs for Monolithic Interconnection of Thermophotovoltaic Devices.

Wang, C. A. ; Shiau, D. A. ; Murphy, P. G. ; O'Brien, P. W. ; Huang, R. K. ; Connors, M. K. ; Anderson, A. C. ; Belenky, G. ; Donetsky, D. ; Anikeev, S. ; Depoy, D. M.

Technical Information Center Oak Ridge Tennessee

关键词: Wafers;    Photovoltaics;    Bonding;    Gallium arsenides;    Adhesion;   

RP-ID  :  DE2004821870

学科分类：工程和技术（综合）

美国|英语

来源: National Technical Reports Library

【 摘 要 】

GaInAsSb/AlGaAsSb/InAsSb/GaSb epitaxial layers were bonded to semi-insulating GaAs handle wafers with SiO(sub x)/Ti/Au as the adhesion layer for monolithic interconnection of thermophotovoltaic (TPV) devices. Epitaxial transfer was completed by removal of the GaSb substrate, GaSb buffer, and InAsSb etch-stop layer by selective chemical etching. The SiO(sub x)/TiAu provides not only electrical isolation, but also high reflectivity and is used as an internal back-surface reflector. Characterization of wafer-bonded epitaxy by high-resolution x-ray diffraction and time-decay photoluminescence indicates minimal residual stress and enhancement in optical quality. 0.54-eV GaInAsSb cells were fabricated and monolithically interconnected in series. A 10-junction device exhibited linear voltage building with an open-circuit voltage of 1.8 V.