Non-Equilibrium Approach to Doping of Wide Bandgap Materials by Molecular Beam Epitaxy.

Tamargo, M. C. ; Neumark, G. F.

Technical Information Center Oak Ridge Tennessee

关键词: Wide gap semiconductors;    Doping;    Energy gap;    Semicondutor materials;    Doped materials;   

RP-ID  :  DE2005824891

学科分类：工程和技术（综合）

美国|英语

来源: National Technical Reports Library

【 摘 要 】

It is well known that it has been difficult to obtain good bipolar doping in a wide bandgap semiconductors. Developed a new doping technique, involving use of a standard dopant, together with a 'co-dopant' used to facilitate the introduction of the dopant, and have vastly alleviated this problem.