Characterization of Silicon Carbide Pressure Sensors at 800 °C

Okojie, Robert S ; Lukco, Dorothy ; Chang, Carl W ; Savrun, Ender

关键词: SILICON CARBIDES;    PRESSURE SENSORS;    HIGH TEMPERATURE ENVIRONMENTS;    SENSITIVITY;    CHARACTERIZATION;   

RP-ID  :  GRC-E-DAA-TN67030

学科分类：电子与电气工程

美国|英语

来源: NASA Technical Reports Server

【 摘 要 】

We have performed the initial characterization of single crystal 4H silicon carbide (4H-SiC) pressure sensors to determine the operational reliability over time at 800 °C. Important parameters such as the zero pressure offset, bridge resistance, and pressure sensitivity as they are affected by temperature were extracted. These parameters showed relative stability within the prescribed operational envelop of the sensor at 800 °C. Of significance is the increase in pressure sensitivity with increasing temperature beyond 400 °C, to the extent that the sensitivity at 800 °C was higher than the room temperature value. The implication of this result is that the sensor can be inserted further into the high temperature environment, thereby capturing the wider bandwidth of the pressure transients than currently possible.