Room Temperature Total-Ionizing Dose Testing of Glenn Research Center (GRC) 500 °C Durable 4H-SiC JFET IC Technology

Ryder, Kaitlyn ; Lauenstein, Jean-Marie ; Wilcox, Ted ; Carts, Marty ; Neudeck, Philip ; Wrbanek, Susan ; Buttler, Robert ; Chen, Liangyu ; Spina, Danny

关键词: ROOM TEMPERATURE;    TOTAL IONIZING DOSE;    JFET;    ELECTRONIC EQUIPMENT TESTS;    HIGH TEMPERATURE ENVIRONMENTS;    SILICON CARBIDES;    INTEGRATED CIRCUITS;    OSCILLATORS;    OPERATIONAL AMPLIFIERS;    GRAPHS (CHARTS);   

RP-ID  :  GSFC-E-DAA-TN69538

学科分类：电子与电气工程

美国|英语

来源: NASA Technical Reports Server

【 摘 要 】

The purpose of this testing was to obtain total ionizing dose (TID) information about custom-built research prototype silicon carbide (SiC) junction field effect transistor (JFET) integrated circuits (ICs) capable of prolonged operation in extremely high-temperature (500 degrees Centigrade) environments. The circuits included ring oscillators and operational amplifiers as well as individual n-channel JFETs. This technology is being considered for use in high temperature, high pressure applications such as Long-Lives Surface System Explorer (LLISSE). These devices were developed at NASA Glenn Research Center (GRC). Testing occurred from July 9th-July 13th, 2018.