Room Temperature Radiation Testing of a 500 °C Durable 4H-SiC JFET Integrated Circuit Technology

Lauenstein, Jean-Marie ; Neudeck, Philip G ; Ryder, Kaitlyn L ; Wilcox, Edward P ; Chen, Liangyu ; Carts, Martin A ; Wrbanek, Susan Y ; Wrbanek, John D

关键词: INTEGRATED CIRCUITS;    HIGH TEMPERATURE ENVIRONMENTS;    JFET;    PROTOTYPES;    RADIATION TOLERANCE;    ROOM TEMPERATURE;    SEMICONDUCTORS (MATERIALS);    SILICON CARBIDES;    SINGLE EVENT EFFECTS (SEE);    TOTAL IONIZING DOSE (TID);   

RP-ID  :  GSFC-E-DAA-TN70540

学科分类：电子与电气工程

美国|英语

来源: NASA Technical Reports Server

【 摘 要 】

Total ionizing dose (TID) and single-event effect (SEE) room-temperature radiation test results are presented for developmental prototype 4H-SiC junction field effect transistor (JFET) semiconductor integrated circuits (ICs) that have demonstrated prolonged operation in extremely high-temperature (500 °C) environments. The devices tested demonstrated over 7 Mrad(Si) TID tolerance and no destructive SEE susceptibility.