High Power W-Band/F-Band Schottky Diode Based Frequency Multipliers

Siles Perez, Jose Vicente [Inventor]Lee, Choonsup [Inventor]Chattopadhyay, Goutam [Inventor]Cooper, Ken B [Inventor]Mehdi, Imran [Inventor]Lin, Robert H [Inventor]Peralta, Alejandro [Inventor]

关键词: FREQUENCY MULTIPLIERS;    SCHOTTKY DIODES;    PATENTS;    CHIPS;   

RP-ID  :  US-Patent-10,075,151, US-Patent-Appl-SN-14/952,361

学科分类：电子与电气工程

美国|英语

来源: NASA Technical Reports Server

【 摘 要 】

A solid state device chip including diodes (generating a higher frequency output through frequency multiplication of the input frequency) and a novel on-chip power combining design. Together with the on-chip power combining, the chip has increased efficiency because the diodes' anodes, being micro-fabricated simultaneously on the same patch of a GaAs wafer under identical conditions, are very well balanced. The diodes' GaAs heterostructure and the overall chip geometry are designed to be optimized for high power operation. As a result of all these features, the device can generate record-setting power having a signal frequency in the F-band and W-band (30% conversion efficiency).