Interconnection of Semiconductor Devices in Extreme Environment Microelectronic Integrated Circuit Chips

Spry, David J [Inventor]Neudeck, Philip G [Inventor]

关键词: SEMICONDUCTOR DEVICES;    INTEGRATED CIRCUITS;    THERMAL INSULATION;    SEMICONDUCTORS (MATERIALS);    FABRICATION;    HIGH TEMPERATURE ENVIRONMENTS;    PATENTS;    CHIPS;    CIRCUITS;    SUBSTRATES;    PHOTORESISTS;   

RP-ID  :  US-Patent-9,978,686, US-Patent-Appl-SN-15/438,130

学科分类：电子与电气工程

美国|英语

来源: NASA Technical Reports Server

【 摘 要 】

A process of fabrication and the resulting integrated circuit device is made of patterned metal electrical interconnections between semiconductor devices residing on and forming extremely harsh environment integrated circuit chips. The process enables more complicated wide band gap semiconductor integrated circuits with more than one level of interconnect to function for prolonged time periods (over 1000 hours) at much higher temperatures (500 C).