Extremely high frequency RF effects on electronics.

Loubriel, Guillermo Manuel ; Vigliano, David ; Coleman, Phillip Dale ; Williams, Jeffery Thomas ; Wouters, Gregg A. ; Bacon, Larry Donald ; Mar, Alan

关键词: ATTENUATION;    ILLUMINANCE;    INTEGRATED CIRCUITS;    PHYSICS;    PRINTED CIRCUITS;    SEMICONDUCTOR DEVICES;    SIMULATORS;   

DOI  :  10.2172/1034873
RP-ID  :  SAND2012-0316
PID  :  OSTI ID: 1034873
Others  :  TRN: US201205%%12

学科分类：物理（综合）

美国|英语

来源: SciTech Connect

【 摘 要 】

The objective of this work was to understand the fundamental physics of extremely high frequency RF effects on electronics. To accomplish this objective, we produced models, conducted simulations, and performed measurements to identify the mechanisms of effects as frequency increases into the millimeter-wave regime. Our purpose was to answer the questions, 'What are the tradeoffs between coupling, transmission losses, and device responses as frequency increases?', and, 'How high in frequency do effects on electronic systems continue to occur?' Using full wave electromagnetics codes and a transmission-line/circuit code, we investigated how extremely high-frequency RF propagates on wires and printed circuit board traces. We investigated both field-to-wire coupling and direct illumination of printed circuit boards to determine the significant mechanisms for inducing currents at device terminals. We measured coupling to wires and attenuation along wires for comparison to the simulations, looking at plane-wave coupling as it launches modes onto single and multiconductor structures. We simulated the response of discrete and integrated circuit semiconductor devices to those high-frequency currents and voltages, using SGFramework, the open-source General-purpose Semiconductor Simulator (gss), and Sandia's Charon semiconductor device physics codes. This report documents our findings.