Single Conductor Alloy as Diffusion Barrier System and Simulataneous OHMIC Contact to N- and P-Type Silicon Carbide

Okojie, Robert S [Inventor]

关键词: SILICON CARBIDES;    CONDUCTORS;    PATENTS;   

RP-ID  :  US-Patent-10,056,259, US-Patent-Appl-SN-15/722,668

学科分类：材料科学（综合）

美国|英语

来源: NASA Technical Reports Server

【 摘 要 】

Use of a single alloy conductor to form simultaneous ohmic contacts (SOC) to n- and p-type 4H-SiC. The single alloy conductor also is an effective diffusion barrier against gold (AU) and oxygen (O.sub.2) at high temperatures (e.g., up to 800.degree. C.). The innovation may also provide an effective interconnecting metallization in a multi-level metallization device scheme.