Universal excess noise in resonant tunneling via strongly localized states

Article

关键词: CONDUCTORS;   

DOI  :  10.1103/PhysRevB.53.15466

来源: SCIE

【 摘 要 】

We show that in disordered resonant tunneling conductors the excess current noise is suppressed by a factor of 3/4 in comparison with its Poisson value provided the electrons tunnel via strongly localized states. Thus we reveal a class of systems exhibiting universality of its shot-noise properties. We discuss recent experiments.

【 授权许可】

Free