Simultaneous Ohmic Contact to Silicon Carbide

Okojie, Robert S [Inventor]

关键词: SILICON CARBIDES;    PLATINUM COMPOUNDS;    TITANIUM COMPOUNDS;    SILICON COMPOUNDS;    SUBSTRATES;    PATENTS;   

RP-ID  :  US-Patent-10,192,970, US-Patent-Appl-SN-14/456,015

学科分类：材料科学（综合）

美国|英语

来源: NASA Technical Reports Server

【 摘 要 】

A simultaneous ohmic contact to silicon carbide includes a mixture of platinum, titanium, and silicon compounds deposited on a silicon carbide substrate. The silicon carbide substrate includes an n-type surface and a p-type surface.