Final report on LDRD project : outstanding challenges for AlGaInN MOCVD.

Mitchell, Christine Charlotte ; Follstaedt, David Martin ; Russell, Michael J. ; Cross, Karen Charlene ; Wang, George T. ; Creighton, James Randall ; Allerman, Andrew Alan ; Koleske, Daniel David ; Lee, Stephen Roger ; Coltrin, Michael Elliott

Sandia National Laboratories

关键词: Modifications;    Testing;    Wavelengths;    Mockup;    Temperature.;   

DOI  :  10.2172/922744
RP-ID  :  SAND2005-1408
RP-ID  :  AC04-94AL85000
RP-ID  :  922744

美国|英语

来源: UNT Digital Library

【 摘 要 】

The AlGaInN material system is used for virtually all advanced solid state lighting and short wavelength optoelectronic devices. Although metal-organic chemical vapor deposition (MOCVD) has proven to be the workhorse deposition technique, several outstanding scientific and technical challenges remain, which hinder progress and keep RD&A costs high. The three most significant MOCVD challenges are: (1) Accurate temperature measurement; (2) Reliable and reproducible p-doping (Mg); and (3) Low dislocation density GaN material. To address challenge (1) we designed and tested (on reactor mockup) a multiwafer, dual wavelength, emissivity-correcting pyrometer (ECP) for AlGaInN MOCVD. This system simultaneously measures the reflectance (at 405 and 550 nm) and emissivity-corrected temperature for each individual wafer, with the platen signal entirely rejected. To address challenge (2) we measured the MgCp{sub 2} + NH{sub 3} adduct condensation phase diagram from 65-115 C, at typical MOCVD concentrations. Results indicate that it requires temperatures of 80-100 C in order to prevent MgCp{sub 2} + NH{sub 3} adduct condensation. Modification and testing of our research reactor will not be complete until FY2005. A new commercial Veeco reactor was installed in early FY2004, and after qualification growth experiments were conducted to improve the GaN quality using a delayed recovery technique, which addresses challenge (3). Using a delayed recovery technique, the dislocation densities determined from x-ray diffraction were reduced from 2 x 10{sup 9} cm{sup -2} to 4 x 10{sup 8} cm{sup -2}. We have also developed a model to simulate reflectance waveforms for GaN growth on sapphire.