A Molecular- and Nano-Electronics Test (MONET) platform fabricated using extreme ultraviolet lithography.

Dentinger, Paul M. ; Cardinale, Gregory F. ; Hunter, Luke L. ; Talin, Albert Alec

Sandia National Laboratories

关键词: 77 Nanoscience And Nanotechnology;    Nanostructures;    99 General And Miscellaneous//Mathematics, Computing, And Information Science;    Electrodes;    Sensitivity;   

DOI  :  10.2172/918247
RP-ID  :  SAND2003-8651
RP-ID  :  AC04-94AL85000
RP-ID  :  918247

美国|英语

来源: UNT Digital Library

【 摘 要 】

We describe the fabrication and characterization of an electrode array test structure, designed for electrical probing of molecules and nanocrystals. We use Extreme Ultraviolet Lithography (EUVL) to define the electrical test platform features. As fabricated, the platform includes nominal electrode gaps of 0 nm, 40 nm, 60 nm, and 80 nm. Additional variation in electrode gap is achieved by controlling the exposure conditions, such as dose and focus. To enable EUVL based nanofabrication, we develop a novel bi-level photoresist process. The bi-level photoresist consists of a combination of a commercially available polydimethylglutarimide (PMGI) bottom layer and an experimental EUVL photoresist top (imaging) layer. We measure the sensitivity of PMGI to EUV exposure dose as a function of photoresist pre-bake temperature, and using this data, optimize a metal lift-off process. Reliable fabrication of 700 Angstrom thick Au structures with sub-1000 Angstrom critical dimensions is achieved, even without the use of a Au adhesion layer, such as Ti. Several test platforms are used to characterize electrical properties of organic molecules deposited as self assembled monolayers.