High-G testing of MEMS mechanical non-volatile memory and silicon re-entry switch.

Baker, Michael Sean ; Pohl, Kenneth Roy

Sandia National Laboratories

关键词: Acceleration;    Reentry;    Switches;    Reentry Vehicles.;    Semiconductor Switches.;   

DOI  :  10.2172/875630
RP-ID  :  SAND2005-6094
RP-ID  :  AC04-94AL85000
RP-ID  :  875630

美国|英语

来源: UNT Digital Library

【 摘 要 】

Two different Sandia MEMS devices have been tested in a high-g environment to determine their performance and survivability. The first test was performed using a drop-table to produce a peak acceleration load of 1792 g's over a period of 1.5 ms. For the second test the MEMS devices were assembled in a gun-fired penetrator and shot into a cement target at the Army Waterways Experiment Station in Vicksburg Mississippi. This test resulted in a peak acceleration of 7191 g's for a duration of 5.5 ms. The MEMS devices were instrumented using the MEMS Diagnostic Extraction System (MDES), which is capable of driving the devices and recording the device output data during the high-g event, providing in-flight data to assess the device performance. A total of six devices were monitored during the experiments, four mechanical non-volatile memory devices (MNVM) and two Silicon Reentry Switches (SiRES). All six devices functioned properly before, during, and after each high-g test without a single failure. This is the first known test under flight conditions of an active, powered MEMS device at Sandia.