Progress and Continuing Challenges in GaSb-based III-V Alloys and Heterostructures Grown by Organometallic Vapor Phase Epitaxy

Wang, CA

Lockheed Martin

关键词: 42 Engineering;    Alloys;    Performance;    Vapor Phase Epitaxy;   

DOI  :  10.2172/824870
RP-ID  :  LM-04K036
RP-ID  :  AC12-00SN39357
RP-ID  :  824870

美国|英语

来源: UNT Digital Library

【 摘 要 】

This paper discusses progress in the preparation of mid-IR GaSb-based III-V materials grown by organometallic vapor phase epitaxy (OMVPE). The growth of these materials is complex, and fundamental and practical issues associated with their growth are outlined. Approaches that have been explored to further improve the properties and performance are briefly reviewed. Recent materials and device results on GaInAsSb bulk layers and GaInAsSb/AlGaAsSb heterostructures, grown lattice matched to GaSb, are presented. State-of-the-art GaInAsSb materials and thermophotovoltaic devices have been achieved. This progress establishes the high potential of OMVPE for mid-IR GaSb-based devices.