AlGaAsSb/GaSb Distributed Bragg Reflectors Grown by Organometallic Vapor Phase Epitaxy

Wang, C.A. ; Vineis, C.J. ; Calawa, D.R.

Lockheed Martin Corporation, Schenectady, NY (United States)

关键词: 36 Materials Science;    42 Engineering;    Antimonides;    Vapor Phase Epitaxy;    Aluminium Compounds;   

DOI  :  10.2172/820701
RP-ID  :  LM-02K008
RP-ID  :  AC12-00SN39357
RP-ID  :  820701

美国|英语

来源: UNT Digital Library

【 摘 要 】

The first AlGaAsSb/GaSb quarter-wave distributed Bragg reflectors grown by metallic vapor phase epitaxy are reported. The peak reflectance is 96% for a 10-period structure.