GaInAsSb/A1GaAsSb/Sb Thermophotovoltaic Devices With an Internal Back-Surface Reflector Formed by Wafer Bonding

Wang, C.A. ; Huang, R.K. ; Shiau, D.A. ; Connors, M.K. ; Murphy, P.G. ; O' ; brien, P.W. ; Anderson, A.C. ; DePoy, D.M. ; Nichols, G. ; Palmasiano, M.N.

Lockheed Martin

关键词: 36 Materials Science;    Absorption;    Implementation;    Dielectric Materials;    42 Engineering;   

DOI  :  10.2172/821864
RP-ID  :  LM-02K141
RP-ID  :  AC12-00SN39357
RP-ID  :  821864

美国|英语

来源: UNT Digital Library

【 摘 要 】

A novel implementation for GAInAsSb/AlGaAsSb/GaSb TPV cells with an internal back-surface reflector (BSR) formed by wafer bonding to GaAs is demonstrated. The SiO{sub x}/Ti/Au internal BSR enhances optical absorption within the device, while the dielectric layer provides electrical isolation. This configuration has the potential to improve TPV device performance; is compatible with monolithic series-interconnection of TPV cells for building voltage; and can mitigate the requirements of filters used for front-surface spectral control. At a short-circuit density of 0.4 A/cm{sup 2}, the open-circuit voltage of a single TPV cell is 0.2 V, compared to 0.37 and 1.8 V for 2- and 10-junction series-interconnected TPV cells, respectively.