Lattice-Matched GaInAsSb/A1GaAsSb/GaSb Materials for Thermophotovoltaic Devices

Wang, C.A. ; Vineis, C.J. ; Choi, H.K. ; Connors, M.K. ; Huang, R.H. ; Daielson, L.R. ; Nichols, G. ; Charache, G.W. ; Donetsky, D. ; Anikeef, S. ; Belenky, G.

Lockheed Martin

关键词: Quantum Efficiency;    Carrier Lifetime;    42 Engineering;    Fill Factors;    Microstructure;   

DOI  :  10.2172/821862
RP-ID  :  LM-02K092
RP-ID  :  AC12-00SN39357
RP-ID  :  821862

美国|英语

来源: UNT Digital Library

【 摘 要 】

High-performance GaInAsSb/AlGaAsSb/GaSb thermophotovoltaic (TPV) devices with quantum efficiency and fill factor near theoretical limits and open-circuit voltage within about 15% of the limit can be routinely fabricated. To achieve further improvements in TPV device performance, detailed materials studies of GaInAsSb epitaxial growth, the microstructure, and minority carrier lifetime, along with device structure considerations are reported. This paper discusses the materials and device issues, and their implications on TPV device performance. In addition, improvements in TPV performance with integrated distributed Bragg reflectors and back-surface reflectors are discussed.