GaAs Films Prepared by RF-Magnetron Sputtering

Ouyang, L.H. ; Rode, D.L. ; Zulkifli, T. ; Abraham-Shrauner, B. ; Lewis, N. ; Freeman, M.R.

Lockheed Martin

关键词: Adhesion;    Wavelengths;    08 Hydrogen;    Absorption;    Spectrophotometry;   

DOI  :  10.2172/821684
RP-ID  :  LM-01K067
RP-ID  :  AC12-00SN39357
RP-ID  :  821684

美国|英语

来源: UNT Digital Library

【 摘 要 】

The authors reported on the optical absorption, adhesion, and microstructure of RF-magnetron sputtered films of hydrogenated amorphous and microcrystalline GaAs films for the 1 to 25 {micro}m infrared wavelength rate. Sputtering parameters which were varied include sputtering power, temperature and pressure, and hydrogen sputtering-gas concentration. TEM results show a sharp transition from purely amorphous GaAs to a mixture of microcrystalline GaAs in an amorphous matrix at 34 {+-} 2 C. By optimizing the sputtering parameters, the optical absorption coefficient can be decreased below 100 cm{sup -1} for wavelengths greater than about 1.25 {micro}m. These results represent the lowest reported values of optical absorption for sputtered films of GaAs directly measured by spectrophotometry for the near-infrared wavelength region.