Interaction of VUV-FEL radiation with B4C and SiC at 32nm wavelength

Hau-Riege, S ; London, R ; Bionta, R

Lawrence Livermore National Laboratory

关键词: Stresses;    Wavelengths;    70 Plasma Physics And Fusion Technology;    Absorption;    36 Materials Science;   

DOI  :  10.2172/893976
RP-ID  :  UCRL-TR-219603
RP-ID  :  W-7405-ENG-48
RP-ID  :  893976

美国|英语

来源: UNT Digital Library

【 摘 要 】

The output fluence and pulse duration of XFELs such as LCLS and TESLA will pose significant challenges to the optical components which may be damaged by the XFEL beam [1]. It is expected that low-atomic-number materials such as SiC, B{sub 4}C, and diamond exhibit weak absorption and therefore are damaged least. It has been suggested that the fundamental damage mechanism that determines the fluence damage threshold for single-shot exposures is thermal melting of the materials [2]. For multiple-shot exposures, the damage threshold is potentially lower than the melt threshold due to fatigue effects associated with mechanical stresses during to thermal cycling [3].