Growth and Characterization of Quantum Dots and Quantum Dots Devices

CEDERBERG, JEFFREY G. ; BIEFELD, ROBERT M. ; SCHNEIDER, H.C. ; CHOW, WENG W.

Sandia National Laboratories

关键词: Optical Properties;    Indium Arsenides;    Miniaturization;    36 Materials Science;    Indium Antimonides;   

DOI  :  10.2172/810938
RP-ID  :  SAND2003-1354
RP-ID  :  AC04-94AL85000
RP-ID  :  810938

美国|英语

来源: UNT Digital Library

【 摘 要 】

Quantum dot nanostructures were investigated experimentally and theoretically for potential applications for optoelectronic devices. We have developed the foundation to produce state-of-the-art compound semiconductor nanostructures in a variety of materials: In(AsSb) on GaAs, GaSb on GaAs, and In(AsSb) on GaSb. These materials cover a range of energies from 1.2 to 0.7 eV. We have observed a surfactant effect in InAsSb nanostructure growth. Our theoretical efforts have developed techniques to look at the optical effects induced by many-body Coulombic interactions of carriers in active regions composed of quantum dot nanostructures. Significant deviations of the optical properties from those predicted by the ''atom-like'' quantum dot picture were discovered. Some of these deviations, in particular, those relating to the real part of the optical susceptibility, have since been observed in experiments.