Properties of ZnO:Ga Thin Films Deposited by dc Magnetron Sputtering: Influence of Ga-Doped Concentrations on Structural and Optical Properties | Science Publications

American Journal of Applied Sciences

Sulhadi Sulhadi¹  Sugianto Sugianto¹  Dwi Suprayogi¹  Didik Aryanto¹  Edy Wibowo¹  Putut Marwoto¹ 

关键词: ZnO:Ga Thin Films;    DC Magnetron Sputtering;    Structural;    Optical Properties;   

DOI  :  10.3844/ajassp.2016.1394.1399

学科分类：自然科学（综合）

来源: Science Publications

【 摘 要 】

ZnO:Ga thin films were deposited on corning glass by dc magnetron sputtering. Influence of Ga-doped concentrations on the structural and optical properties of ZnO:Ga thin films were investigated. The XRD patterns show that the crystallinity of deposited films improved with the increase of Ga concentrations from 1 to 2%, then decrease at 3% Ga concentrations. The optical transmittance of films with 1% and 2% Ga concentration reach 85% in the visible range, while at 3% Ga concentration the transmittance of film only 70%. We observed that the band gap of film change due to the addition of Ga dopant. The band gap of the films are 3.27, 3.28 and 3.21 eV for 1, 2 and 3% Ga-doped concentrations, respectively.

【 授权许可】

Unknown