Inductively Coupled Plasma Reactive Ion Etching of AlGaAsSb and InGaAsSb for Quaternary Antimonide MIM Thermophotovoltaics

Palmisiano, M. N. ; Peake, G. M. ; Shul, R. J. ; Ashby, C. I. ; Cederberg, J. G. ; Hafich, M. J. ; Biefeld, R. M.

Bettis Atomic Power Laboratory

关键词: Oxides;    Etching;    36 Materials Science;    Antimonides;    Fabrication;   

DOI  :  10.2172/805334
RP-ID  :  B-T-3447
RP-ID  :  N00024-98-C-4064
RP-ID  :  805334

美国|英语

来源: UNT Digital Library

【 摘 要 】

In this letter we report on the inductively coupled plasma reactive ion etching (ICP-RIE) of InGaAsSb and AlGaAsSb for the fabrication of quaternary monolithic interconnected module (MIM) thermophotovoltaic (TPV) devices. A rapid dry etch process is described that produces smooth surfaces using BCl[sub]3 for AlGaAsSb and InGaAsSb capped with GaSb. Uncapped InGaAsSb was etched by adding an H[sub]2 plasma preclean to reduce surface oxides. InGaAsSb etch rate was studied as a function of accelerating voltage, RF power, temperature and pressure. The etch conditions found for InGaAsSb were used for AlGaAsSb etching to determine the effectiveness for isolation of the MIM cells.