A SPICE Model and Electrostatic Field Analysis of the MOS Turn-Off Thyristor

Kelly, D Q ; Mayhall, D J ; Wilson, M J ; Lahowe, D A

Lawrence Livermore National Laboratory

关键词: Breakdown;    Cathodes;    Resistors;    Electrostatics;    Junction Transistors;   

DOI  :  10.2172/15013459
RP-ID  :  UCRL-ID-149060
RP-ID  :  W-7405-ENG-48
RP-ID  :  15013459

美国|英语

来源: UNT Digital Library

【 摘 要 】

This paper presents a circuit model and an electrostatic field analysis with an approximate model of the SDM170HK MOS turn-off thyristor (MTO) fabricated by Silicon Power Corporation. The circuit model consists of five cells, each containing two bipolar junction transistors and three resistors. The turn-off feature of the MTO was simulated by inserting an array of 21 Fairchild FDS6670A MOSFET importable sub-circuit components between the cathode and the turn-on gate. The model was then used to create a four-terminal sub-circuit component representing the MTO that can be readily imported into computer-aided circuit design programs such as PSPICE and Micro-Cap. The generated static I-V characteristics and simulated switching waveforms are shown. The electrostatic field analysis was done for the maximum operating voltage of 4.5 kV using the Ansoft Maxwell 3D field simulator. Electrostatic field magnitudes that exceed the nominal air breakdown threshold of 30 kV/cm were observed surrounding the simulated turn-off gate wire, the turn-off gate ring contact, and the cathode ring contact. The resulting areas of high fields are a concern, as arc track marks have been found on the inner surface of the ceramic insulator near the internal gate connections of a failed device.