Boron Nitride Capacitors for Advanced Power Electronic Devices

Badi, N. ; Starikov, D. ; Boney, C. ; Bensaoula, A. ; Johnstone, D.

Integrated Micro Sensors, Inc.

关键词: 25 Energy Storage;    Physical Vapor Deposition;    Thin Films Boron Nitride, Boron Oxynitride, Capacitors, High Temperature Capacitors, Energy Storage, High Temperature Electronics, High Energy Density Capacitors, Sic Matching Capacitors;    Capacitors;    Boron Nitrides;   

DOI  :  10.2172/1012989
RP-ID  :  DOE/05ER84325-Final Report
RP-ID  :  FG02-05ER84325
RP-ID  :  1012989

美国|英语

来源: UNT Digital Library

【 摘 要 】

This project fabricates long-life boron nitride/boron oxynitride thin film -based capacitors for advanced SiC power electronics with a broad operating temperature range using a physical vapor deposition (PVD) technique. The use of vapor deposition provides for precise control and quality material formation.