A study of the creation and characterization of nitrogen doped CuInSe2 (CIS:N), as a potential improved back contact material for CdTe and Cu(IN_xGA_1-x)Se2 photovoltaic cells

Thin Film Photovoltaics;CuInSe2;Physical Vapor Deposition;Electronic Materials

Erickson, Thomas Glenn ; Rockett ; Angus Alexander

关键词: Thin Film Photovoltaics;    CuInSe2;    Physical Vapor Deposition;    Electronic Materials;   

Others  :  https://www.ideals.illinois.edu/bitstream/handle/2142/92675/ERICKSON-THESIS-2016.pdf?sequence=1&isAllowed=y

美国|英语

来源: The Illinois Digital Environment for Access to Learning and Scholarship

【 摘 要 】

Nitrogen is incorporated into CuInSe2 (CIS), and other related materials, using a scalable, commonly used, technique.The growth characteristics, film morphology and electronic properties of these N doped materials, as it is affected by nitrogen, are studied, both in films grown with nitrogen, and in films implanted with nitrogen.