Epitaxial Growth of GaN-based LEDs on Simple Sacrificial Substrates

Ferguson, Ian ; Summers, Chris

Georgia Tech Research Corporation

关键词: Removal;    Gallium Nitrides;    36 Materials Science;    42 Engineering;    Aluminium Oxides;   

DOI  :  10.2172/1009960
RP-ID  :  None
RP-ID  :  FC26-06NT42856
RP-ID  :  1009960

美国|英语

来源: UNT Digital Library

【 摘 要 】

The objective of this project is to produce alternative substrate technologies for GaN-based LEDs by developing an ALD interlayer of Al{sub 2}O{sub 3} on sacrificial substrates such as ZnO and Si. A sacrificial substrate is used for device growth that can easily be removed using a wet chemical etchant leaving only the thin GaN epi-layer. After substrate removal, the GaN LED chip can then be mounted in several different ways to a metal heat sink/reflector and light extraction techniques can then be applied to the chip and compared for performance. Success in this work will lead to high efficiency LED devices with a simple low cost fabrication method and high product yield as stated by DOE goals for its solid state lighting portfolio.