Semiconductor Quantum Dots for Advanced Blue Light Emitting Devices and Laser Diodes

Lee, H. ; Thielen, P.

Lawrence Livermore National Laboratory

关键词: Gallium Nitrides;    36 Materials Science;    Color;    Crystal Defects;    42 Engineering;   

DOI  :  10.2172/792654
RP-ID  :  UCRL-ID-138550
RP-ID  :  W-7405-Eng-48
RP-ID  :  792654

美国|英语

来源: UNT Digital Library

【 摘 要 】

Blue light emitting devices (LEDs) are rapidly becoming an increasingly important technology underscored by intense world-wide research and development. Blue emitter technology is the cornerstone for crucial applications that include full-color flat panel displays, ultra-high density optical memories and data storage, back lighting, and chemical and biological sensing. Currently, the GaN material system dominate the field of blue emitters, which in turn is dominated by Japanese researchers. However, critical obstacles remain for this material system. Growth-related defects, which arise from lattice-matching problems, degrade the device and limits operational lifetimes. Blue GaN diodes produced in Japan presently operate for the longest time. Those produced in the US have significantly shorter lifetimes.